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Questions on the Article; Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy
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This 6 page paper answers questions set by the student concerning the use with GaAsN barrier grown by solid source molecular beam epitaxy when used in quantum dot lasers. The bibliography cites 1 source.
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Pages:
6
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Filename:TS14_TEquandot.rtf |
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Paper Title:
Questions on the Article; Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy
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